位置：首页 > IC中文资料第7555页 > SIHFZ34S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFZ34S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFZ34S | Power MOSFET FEATURES • Advanced process technology • Surface mount • Low-profile through-hole (IRFZ34L, SiHFZ34L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information a | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ34S | Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ34S | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
SIHFZ34S产品属性
- 类型
描述
- 型号
SIHFZ34S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VIS |
23+ |
D2PAK |
5000 |
原装正品,假一罚十 |
|||
VISHAY/威世 |
23+ |
SOT263 |
7000 |
||||
Vishay |
25+ |
D2PAK(TO-263) |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Vishay |
20+ |
D2PAK(TO-263) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
2022+ |
SOT263 |
29880 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
24+ |
D2PAK(TO-263) |
60000 |
全新原装现货 |
|||
VISHAY/威世 |
23+ |
D2PAK(TO-263) |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY/威世 |
23+ |
D2PAK(TO-263) |
50000 |
全新原装正品现货,支持订货 |
|||
V |
24+ |
TO-220 |
5000 |
只做原装公司现货 |
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2019-12-7
DdatasheetPDF页码索引
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