型号 功能描述 生产厂家 企业 LOGO 操作
SIHFZ34S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

SIHFZ34S

Power MOSFET

FEATURES • Advanced process technology • Surface mount • Low-profile through-hole (IRFZ34L, SiHFZ34L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information a

VishayVishay Siliconix

威世威世科技公司

SIHFZ34S

Power MOSFET

文件:355.44 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFZ34S

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:355.44 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:355.44 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:355.44 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:355.44 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFZ34S产品属性

  • 类型

    描述

  • 型号

    SIHFZ34S

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Power MOSFET

更新时间:2025-11-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
NA/
26050
原厂直销,现货供应,账期支持!
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原装/可含税
VIS
23+
D2PAK
5000
原装正品,假一罚十
VISHAY/威世
23+
SOT263
7000
Vishay
20+
D2PAK(TO-263)
36900
原装优势主营型号-可开原型号增税票
VISHAY/威世
2022+
TO-263
32500
原厂代理 终端免费提供样品
VISHAY/威世
23+
D2PAK(TO-263)
50000
全新原装正品现货,支持订货
VISHAY/威世
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY/威世
23+
D2PAK(TO-263)
50000
全新原装正品现货,支持订货
VISHAY/威世
24+
D2PAK(TO-263)
60000
全新原装现货

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