位置：首页 > IC中文资料第11033页 > SIHFZ34
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFZ34 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFZ34 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ34 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation | KERSEMI | | |
SIHFZ34 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ34 | Power MOSFET 文件：1.63806 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SiHFZ34 | Power MOSFET 文件：1.63967 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ34 | Power MOSFET 文件：1.56243 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ34 | Dynamic dV/dt Rating 文件：1.51587 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ34 | Power MOSFET 文件：1.56243 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation | KERSEMI | | ||
Power MOSFET FEATURES • Advanced process technology • Surface mount • Low-profile through-hole (IRFZ34L, SiHFZ34L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information a | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Advanced process technology • Surface mount • Low-profile through-hole (IRFZ34L, SiHFZ34L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information a | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET Advanced process technology\nSurface mount\nLow-profile through-hole (IRFZ34L, SiHFZ34L); | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.56243 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.63806 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：361.76 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：355.44 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
SIHFZ34产品属性
- 类型
描述
- 型号
SIHFZ34
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2022+ |
SOT263 |
29880 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
25+ |
TO-2623L(I2PAK) |
90000 |
全新原装现货 |
|||
VISHAY/威世 |
23+ |
D2PAK(TO-263) |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY/威世 |
23+ |
D2PAK(TO-263) |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
25+ |
D2PAK(TO-263) |
10000 |
原装现货假一罚十 |
|||
Vishay |
20+ |
TO-2623L(I2PAK) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
23+ |
SOT263 |
7000 |
||||
VIS |
23+ |
D2PAK |
5000 |
原装正品,假一罚十 |
|||
VISHAY/威世 |
25+ |
TO-220 |
22800 |
本公司 只做全新原装正品 |
SIHFZ34规格书下载地址
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2019-12-7
DdatasheetPDF页码索引
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