位置：首页 > IC中文资料第11032页 > SIHFZ24
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFZ24 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissi | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFZ24 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissi | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ24 | Power MOSFET FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide th | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ24 | Power MOSFET 文件：1.25638 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ24 | Power MOSFET 文件：3.80987 Mbytes Page：7 Pages | KERSEMI | | |
SIHFZ24 | Power MOSFET 文件：235.81 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ24 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissi | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer w | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer w | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer w | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Advanced process technology • Surface mount (IRFZ24S, SiHFZ24S) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer w | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer w | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer w | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：235.81 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：3.80987 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：379.62 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
SIHFZ24产品属性
- 类型
描述
- 型号
SIHFZ24
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay |
25+ |
D2PAK(TO- |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VB |
25+ |
T0-263 |
10000 |
原装现货假一罚十 |
|||
VISHAY/威世 |
2022+ |
SOT263 |
29880 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
23+ |
D2PAK(TO-263) |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY/威世 |
23+ |
D2PAK(TO-263) |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
TO-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
Vishay |
20+ |
D2PAK(TO-263) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
24+ |
D2PAK(TO-263) |
60000 |
||||
VISHAY/威世 |
23+ |
SOT263 |
7000 |
SIHFZ24规格书下载地址
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2019-12-7
DdatasheetPDF页码索引
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