位置：首页 > IC中文资料第11032页 > SIHFZ14
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFZ14 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世威世科技公司 |   | |
SIHFZ14 | Power MOSFET 文件：1.58911 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
SIHFZ14 | Power MOSFET 文件：1.58911 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
SIHFZ14 | Power MOSFET 文件：1.54238 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
SIHFZ14 | Power MOSFET 文件：1.66457 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
SIHFZ14 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.58911 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.66457 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：303.29 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Halogen-free According to IEC 61249-2-21 Definition 文件：303.29 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：382.57 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Halogen-free According to IEC 61249-2-21 Definition 文件：303.29 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：382.57 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：382.57 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：382.57 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | |
SIHFZ14产品属性
- 类型
描述
- 型号
SIHFZ14
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Vishay |
20+ |
D2PAK(TO-263) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VIS |
23+ |
TO-220 |
10000 |
原装正品,假一罚十 |
|||
VISHAY/威世 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
|||
VISHAY/威世 |
23+ |
SOT263 |
7000 |
||||
VISHAY/威世 |
2022+ |
TO-220 |
32500 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
23+ |
D2PAK(TO-263) |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
Vishay |
25+ |
D2PAK(TO-263) |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
SIHFZ14规格书下载地址
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2019-12-7
DdatasheetPDF页码索引
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