位置：首页 > IC中文资料第11362页 > SIHFU9310
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFU9310 | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFU9310 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre | KERSEMI | | |
SIHFU9310 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre | KERSEMI | | |
SIHFU9310 | Power MOSFET FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9310, SiHFR9310) • Straight lead (IRFU9310, SiHFU9310) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat | VISHAYVishay Siliconix 威世威世科技公司 | | |
SiHFU9310 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFU9310 | Power MOSFET 文件：3.34757 Mbytes Page：7 Pages | KERSEMI | | |
SiHFU9310 | Power MOSFET 文件：247.16 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre | KERSEMI | | ||
Power MOSFET 文件：3.34757 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：267.35 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
50 Ohm, RG58, 20 AWG Product Description RG-58/U type, 20 AWG solid .033 bare copper conductor, polyethylene insulation, Duobond® II + tinned copper braid shield (55% coverage), PVC jacket. | BELDEN 百通 | | ||
Snap Rivets 文件：152.09 Kbytes Page：2 Pages | HEYCO | | ||
MACHINE SCREW PAN PHILLIPS 10-32 文件：130.87 Kbytes Page：1 Pages | KEYSTONE Keystone Electronics Corp. | | ||
Snap Rivets 文件：152.09 Kbytes Page：2 Pages | HEYCO | | ||
Infra-Red Wavelength 文件：112.83 Kbytes Page：6 Pages | AVAGO 安华高 | |
SIHFU9310产品属性
- 类型
描述
- 型号
SIHFU9310
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-251 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY |
20+ |
TO251 |
100 |
原装 |
|||
VISHAY/威世 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
|||
Vishay |
25+ |
TO-251 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VB |
25+ |
TO220AB |
10000 |
原装现货假一罚十 |
|||
VISHAY/威世 |
2022+ |
TO-251 |
50000 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
23+ |
SOT263 |
7000 |
||||
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VIS |
23+ |
TO-251 |
10000 |
原装正品,假一罚十 |
SIHFU9310规格书下载地址
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2019-12-7
DdatasheetPDF页码索引
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