位置：首页 > IC中文资料 > SIHFU9120-E3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFU9120-E3 | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFU9120-E3 | Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
SIHFU9120-E3 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
SIHFU9120-E3 | P-Channel 100 V (D-S) MOSFET 文件：963.1 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VishayVishay |
NEW- |
MOSFETs |
100000 |
Trans MOSFET P-CH 200V 3.6A 3-Pin(3+Tab) TO-251AA |
|||
VIS |
23+ |
TO-251 |
10000 |
原装正品,假一罚十 |
|||
VISHAY(威世) |
2447 |
TO-251-3 |
315000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
VISHAY/威世 |
23+ |
SOT263 |
7000 |
||||
VISHAY/威世 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
|||
VISHAY/威世 |
2022+ |
TO-251 |
50000 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
23+ |
TO-251 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY |
20+ |
TO251 |
100 |
原装 |
|||
VB |
25+ |
TO-251AA |
10000 |
原装现货假一罚十 |
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2019-12-7
DdatasheetPDF页码索引
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