Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR224, SiHFR224) • Straight lead (IRFU224, SiHFU224) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

iscN-Channel MOSFET Transistor

文件：340.07 Kbytes Page：2 Pages

Power MOSFET

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

文件：368.2 Kbytes Page：13 Pages

SCHOTTKY RECTIFIER

125℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SMK FEMALE TO SMK FEMALE STRAIGHT ADAPTER

文件：178.55 Kbytes Page：1 Pages

Axial Lead and Cartridge Fuses - Subminiature Glass Body

文件：45.23 Kbytes Page：1 Pages

Mini 7/8 Male Internal Threads 5 Pin Field Attachable

文件：199.12 Kbytes Page：2 Pages

Guard ring for enhanced ruggedness and long term reliability

文件：209.34 Kbytes Page：4 Pages