型号 功能描述 生产厂家 企业 LOGO 操作
SIHFRC20

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

SIHFRC20

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

SIHFRC20

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFRC20, SiHFRC20) • Straight lead (IRFUC20, SiHFUC20) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

VishayVishay Siliconix

威世威世科技公司

SIHFRC20

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

SIHFRC20

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

SIHFRC20

iscN-Channel MOSFET Transistor

文件:332.98 Kbytes Page:2 Pages

ISC

无锡固电

SIHFRC20

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

• Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFRC20, SiHFRC20) • Straight lead (IRFUC20, SiHFUC20) • Available in tape and reel • Fast switching • Ease of paralleling

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

Power MOSFET

文件:1.13808 Mbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 650 V (D-S) MOSFET

文件:1.08799 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:1.13808 Mbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.13808 Mbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.13808 Mbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFRC20产品属性

  • 类型

    描述

  • 型号

    SIHFRC20

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Power MOSFET

更新时间:2025-11-26 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
22+
SOT-252
100000
代理渠道/只做原装/可含税
VISHAY/威世
24+
NA/
28800
优势代理渠道,原装正品,可全系列订货开增值税票
Vishay
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
VISHAY
23+
SOT252
8560
受权代理!全新原装现货特价热卖!
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY/威世
23+
SOT252
8000
只做原装现货
VISHAY/威世
23+
SOT252
7000
Vishay
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VISHAY/威世
2022+
SOT252
29880
原厂代理 终端免费提供样品
NK/南科功率
2025+
TO-252
986966
国产

SIHFRC20数据表相关新闻