位置:首页 > IC中文资料第12468页 > SIHFR9220
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFR9220 | Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | ||
SIHFR9220 | Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | ||
SIHFR9220 | Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | ||
SIHFR9220 | Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | ||
SIHFR9220 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9220, SiHFR9220) • Straight lead (IRFUFU9220, SiHFU9220) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | ||
SiHFR9220 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | ||
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9220, SiHFR9220) • Straight lead (IRFUFU9220, SiHFU9220) • Available in tape and reel • P-channel • Fast switching | VishayVishay Siliconix 威世威世科技公司 | |||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | |||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | |||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | |||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | |||
Power MOSFET 文件:785.7 Kbytes Page:13 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:785.7 Kbytes Page:13 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:785.7 Kbytes Page:13 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:785.7 Kbytes Page:13 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Complete 12-Bit 1.5/3.0/10.0 MSPS ithic A/D Converters GENERAL DESCRIPTION The AD9221, AD9223, and AD9220 are a generation of high performance, single supply 12-bit analog-to-digital converters. Each device exhibits true 12-bit linearity and temperature drift performance1 as well as 11.5-bit or better ac performance.2 The AD9221/AD9223/AD9220 share t | AD 亚德诺 | |||
Complete 12-Bit 1.5/3.0/10.0 MSPS Monolithic A/D Converters GENERAL DESCRIPTION The AD9221, AD9223, and AD9220 are a generation of high performance, single supply 12-bit analog-to-digital converters. Each device exhibits true 12-bit linearity and temperature drift performance1 as well as 11.5-bit or better ac performance.2 The AD9221/AD9223/AD9220 share t | AD 亚德诺 | |||
Programmable RambusTM XDRTM Clock Generator 文件:192.16 Kbytes Page:16 Pages | IDT | |||
Programmable RambusTM XDRTM Clock Generator 文件:192.16 Kbytes Page:16 Pages | IDT | |||
Complete 12-Bit 1.5/3.0/10.0 MSPS olithic A/D Converters 文件:412.8 Kbytes Page:32 Pages | AD 亚德诺 |
SIHFR9220产品属性
- 类型
描述
- 型号
SIHFR9220
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
31500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY(威世) |
24+ |
TO252 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
VISHAY/威世 |
25+ |
TO252 |
20300 |
VISHAY/威世原装特价SiHFR9220即刻询购立享优惠#长期有货 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VBSEMI/微碧半导体 |
24+ |
TO252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
VISHAY/威世 |
2223+ |
TO-252 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
VISHAY |
23+ |
SOT252 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY/威世 |
2447 |
TO252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY/威世 |
20+ |
TO-252 |
7500 |
现货很近!原厂很远!只做原装 |
SIHFR9220芯片相关品牌
SIHFR9220规格书下载地址
SIHFR9220参数引脚图相关
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DdatasheetPDF页码索引
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