位置：首页 > IC中文资料第7541页 > SIHFR9210T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFR9210T | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK | VishayVishay Siliconix 威世威世科技公司 |   | |
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：891.33 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
Drive Fasteners 文件：93.97 Kbytes Page：1 Pages | Heyco | | ||
ACCEPTS 16,18 or 20 PIN WIDE S.O.I.C. BUILD PLUG-IN TEST CIRCUITS AND MODULES 文件：173.83 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
SIHFR9210T产品属性
- 类型
描述
- 型号
SIHFR9210T
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
31500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Vishay |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VBSEMI/微碧半导体 |
24+ |
TO252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
VISHAY/威世 |
2223+ |
TO-252 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
VISHAY/威世 |
2447 |
TO252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY/威世 |
20+ |
TO-252 |
7500 |
现货很近!原厂很远!只做原装 |
|||
Vishay |
25+ |
TO-252 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY |
23+ |
TO-252 |
12800 |
公司只有原装 欢迎来电咨询。 |
SIHFR9210T芯片相关品牌
SIHFR9210T规格书下载地址
SIHFR9210T参数引脚图相关
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2019-12-7
DdatasheetPDF页码索引
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