位置：首页 > IC中文资料第7541页 > SIHFR9120
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFR9120 | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 |   | |
SIHFR9120 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
SIHFR9120 | Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
SIHFR9120 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
SIHFR9120 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
SIHFR9120 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9120, SiHFR9120) • Straight lead (IRFU9120, SiHFU9120) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | |
SIHFR9120 | P-Channel 100 V (D-S) MOSFET 文件：1.04717 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
SiHFR9120 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET 文件：1.18471 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.18471 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
P-Channel 100 V (D-S) MOSFET 文件：1.04715 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 100 V (D-S) MOSFET 文件：1.04713 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：1.18471 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.18471 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
INSTRUMENTATION HANDLES 文件：86.3 Kbytes Page：1 Pages | KEYSTONE Keystone Electronics Corp. | | ||
Mounting brackets 文件：1.18215 Mbytes Page：1 Pages | MASCOT | | ||
Programmable DC Power Supplies 文件：800.12 Kbytes Page：3 Pages | BK B&K Precision Corporation | | ||
40A200V N-CHANNEL MOSFET 文件：441.69 Kbytes Page：8 Pages | KIA 可易亚半导体 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：68.73 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | |
SIHFR9120产品属性
- 类型
描述
- 型号
SIHFR9120
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
21750 |
原厂直销,现货供应,账期支持! |
|||
VISHAY |
25+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
VISHAY(威世) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VISHAY |
23+ |
SOT252 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY/威世 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
Vishay |
25+ |
TO-252 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY/威世 |
2022+ |
SOT252 |
29880 |
原厂代理 终端免费提供样品 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
VISHAY/威世 |
24+ |
TO-252 |
60000 |
全新原装现货 |
|||
VISHAY/威世 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
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SIHFR9120规格书下载地址
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DdatasheetPDF页码索引
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