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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SIHFR420 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | ||
SIHFR420 | DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | ||
SIHFR420 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | ||
SIHFR420 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技 | ||
SIHFR420 | DynamicdV/dtRating 文件:4.27854 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | ||
SIHFR420 | N-Channel650V(D-S)PowerMOSFET 文件:1.07583 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | ||
SIHFR420 | iscN-ChannelMOSFETTransistor 文件:308.12 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
PowerMOSFET FEATURES •LowgateChargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceand avalanchevoltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | |||
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | |||
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | |||
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:1.0767 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET 文件:2.68622 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET 文件:2.68622 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET 文件:267.92 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:1.07683 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET 文件:2.68622 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET 文件:2.68622 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET 文件:267.92 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:267.92 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
DynamicdV/dtRating 文件:4.27854 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET 文件:1.07699 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET 文件:1.0787 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
DynamicdV/dtRating 文件:4.27854 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
DynamicdV/dtRating 文件:4.27854 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET 文件:1.07868 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
NPNSiliconRFTransistor DESCRIPTION TheSTART420isamemberoftheSTARTfamilythatprovidemarketwiththestateoftheartofRFsiliconprocess.ManufacturatedinthethirdgenerationofSTproprietarybipolarprocess,itoffersthebestmixofgainandNFforgivenbreakdownvoltage(BVceo). Itreachesperform | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SURFACEMOUNTFUSES Features •Heatresistantceramichousing •Forlineorlowvoltageapplications •Lowvoltagedrop •Internationallyapproved •Highpulseresistance •Alsoavailableasholdersystem425withmountedfuse420 | LittelfuseLittelfuse Inc. 力特力特公司 | |||
SupportingtheIntelCeleronprocessor 文件:1.3709 Mbytes Page:100 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
CeleronMProcessoron65nmProcess 文件:1.93023 Mbytes Page:71 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
420LEDwire-to-boardconnector 文件:307.61 Kbytes Page:1 Pages | DBLECTRODB Lectro Inc 迪贝电子迪贝电子(上海)有限公司 |
SIHFR420产品属性
- 类型
描述
- 型号
SIHFR420
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
TO-252AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
VISHAY/威世 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
fairchild |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
Vishay |
2020+ |
TO-252 |
55160 |
公司代理品牌,原装现货超低价清仓! |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-252-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
VISHAY(威世) |
23+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VISHAY/威世 |
23+ |
NA/ |
18500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VIS |
23+ |
TO-251 |
10000 |
原装正品,假一罚十 |
|||
2322+ |
NA |
33220 |
无敌价格 主销品牌 正规渠道订货 免费送样!!! |
SIHFR420规格书下载地址
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