型号 功能描述 生产厂家&企业 LOGO 操作
SIHFR420

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay
SIHFR420

DynamicdV/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
SIHFR420

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
SIHFR420

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技

Vishay
SIHFR420

DynamicdV/dtRating

文件:4.27854 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
SIHFR420

N-Channel650V(D-S)PowerMOSFET

文件:1.07583 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
SIHFR420

iscN-ChannelMOSFETTransistor

文件:308.12 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

FEATURES •LowgateChargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceand avalanchevoltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay

DynamicdV/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay

DynamicdV/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay

DynamicdV/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.0767 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

PowerMOSFET

文件:2.68622 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

文件:2.68622 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

文件:267.92 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.07683 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

PowerMOSFET

文件:2.68622 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

文件:2.68622 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

文件:267.92 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:267.92 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

DynamicdV/dtRating

文件:4.27854 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

文件:1.07699 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

PowerMOSFET

文件:1.0787 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

DynamicdV/dtRating

文件:4.27854 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

DynamicdV/dtRating

文件:4.27854 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

文件:1.07868 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

NPNSiliconRFTransistor

DESCRIPTION TheSTART420isamemberoftheSTARTfamilythatprovidemarketwiththestateoftheartofRFsiliconprocess.ManufacturatedinthethirdgenerationofSTproprietarybipolarprocess,itoffersthebestmixofgainandNFforgivenbreakdownvoltage(BVceo). Itreachesperform

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SURFACEMOUNTFUSES

Features •Heatresistantceramichousing •Forlineorlowvoltageapplications •Lowvoltagedrop •Internationallyapproved •Highpulseresistance •Alsoavailableasholdersystem425withmountedfuse420

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

SupportingtheIntelCeleronprocessor

文件:1.3709 Mbytes Page:100 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

CeleronMProcessoron65nmProcess

文件:1.93023 Mbytes Page:71 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

420LEDwire-to-boardconnector

文件:307.61 Kbytes Page:1 Pages

DBLECTRODB Lectro Inc

迪贝电子迪贝电子(上海)有限公司

DBLECTRO

SIHFR420产品属性

  • 类型

    描述

  • 型号

    SIHFR420

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Power MOSFET

更新时间:2024-6-4 21:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay Siliconix
24+
TO-252AA
30000
晶体管-分立半导体产品-原装正品
VISHAY/威世
22+
SOT-252
100000
代理渠道/只做原装/可含税
VISHAY/威世
2022
TO-252
80000
原装现货,OEM渠道,欢迎咨询
fairchild
2023+
TO-252
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
Vishay
2020+
TO-252
55160
公司代理品牌,原装现货超低价清仓!
VISHAY-威世
24+25+/26+27+
TO-252-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
VISHAY(威世)
23+
TO-252
9908
支持大陆交货,美金交易。原装现货库存。
VISHAY/威世
23+
NA/
18500
优势代理渠道,原装正品,可全系列订货开增值税票
VIS
23+
TO-251
10000
原装正品,假一罚十
2322+
NA
33220
无敌价格 主销品牌 正规渠道订货 免费送样!!!

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