位置：首页 > IC中文资料第12468页 > SIHFR320
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFR320 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFR320 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
SIHFR320 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?999 | VISHAYVishay Siliconix 威世威世科技公司 | | |
SiHFR320 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFR320 | iscN-Channel MOSFET Transistor 文件：332.78 Kbytes Page：2 Pages | ISC 无锡固电 | | |
SIHFR320 | Power MOSFET 文件：1.07642 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.07653 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.0766 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：1.07763 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：1.07666 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Celeron D Processor 文件：1.75778 Mbytes Page：82 Pages | INTEL 英特尔 | | ||
TACT SWITCHES 文件：327.77 Kbytes Page：3 Pages | E-SWITCH | | ||
SCREW TYPE SERIES 文件：323.12 Kbytes Page：1 Pages | DBLECTRO | | ||
Rectifier Diode 文件：370.14 Kbytes Page：3 Pages | SEMIKRON 赛米控丹佛斯 | | ||
Clock Oscillators 文件：143.97 Kbytes Page：3 Pages | OSCILENT | |
SIHFR320产品属性
- 类型
描述
- 型号
SIHFR320
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
VBSEMI/微碧半导体 |
24+ |
TO252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
VISHAY/威世 |
24+ |
TO-252 |
9600 |
原装现货,优势供应,支持实单! |
|||
VISHAY/威世 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY/威世 |
22+ |
TO-252 |
20000 |
只做原装 |
|||
VISHAY/威世 |
25+ |
TO252 |
20300 |
VISHAY/威世原装特价SiHFR320即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
2022+ |
TO-252 |
32500 |
原厂代理 终端免费提供样品 |
|||
VISHAY |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
VISHAY/威世 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
SIHFR320规格书下载地址
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2019-12-7
DdatasheetPDF页码索引
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