Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

文件：1.56651 Mbytes Page：9 Pages

Power MOSFET

文件：1.56179 Mbytes Page：9 Pages

Power MOSFET

文件：1.56179 Mbytes Page：9 Pages

iscN-Channel MOSFET Transistor

文件：444.49 Kbytes Page：2 Pages

Power MOSFET

文件：1.59347 Mbytes Page：11 Pages

Power MOSFET

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

文件：1.59347 Mbytes Page：11 Pages

Power MOSFET

文件：1.59347 Mbytes Page：11 Pages

Power MOSFET

文件：1.56179 Mbytes Page：9 Pages

Low Power, 1 MBd Digital Optocoupler

Description The Broadcom® ACPL-M50L (single-channel in SO-5 footprint), ACPL-054L (dual-channel in SO-8 footprint), ACPL-W50L (single-channel in stretched SO-6 footprint), and ACPL-K54L (dual-channel in stretched SO-8 footprint) are low power, low-input current, 1 MBd digital optocouplers. Featu

Low Power, 1 MBd Digital Optocoupler

Description The Broadcom® ACPL-M50L (single-channel in SO-5 footprint), ACPL-054L (dual-channel in SO-8 footprint), ACPL-W50L (single-channel in stretched SO-6 footprint), and ACPL-K54L (dual-channel in stretched SO-8 footprint) are low power, low-input current, 1 MBd digital optocouplers. Featu

Schottky Barrier Diode

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Schottky Barrier Diode

文件：49.58 Kbytes Page：2 Pages

Schottky Barrier Diode

文件：50.13 Kbytes Page：2 Pages