Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz) • Sink

Power MOSFET

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz) • Sink

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

Power MOSFET

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

8A 500V N-channel Enhancement Mode Power MOSFET

文件：1.63311 Mbytes Page：12 Pages

9Amps竊?00V N-CHANNEL MOSFET

文件：122.87 Kbytes Page：5 Pages

8A竊?00V N-CHANNEL MOSFET

文件：215.89 Kbytes Page：6 Pages

8A 500V N-CHANNEL MOSFET

文件：242.9 Kbytes Page：7 Pages