Power MOSFET

1. Low Gate Charge QgResults in Simple Drive Requirement 2. Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 3. Fully Characterized Capacitance and Avalanche Voltage and Current 4. Low RDS(on) 5. Lead (Pb)-free Available

Power MOSFET

文件：165.06 Kbytes Page：8 Pages

Power MOSFET

1. Low Gate Charge QgResults in Simple Drive Requirement 2. Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 3. Fully Characterized Capacitance and Avalanche Voltage and Current 4. Low RDS(on) 5. Lead (Pb)-free Available

Power MOSFET

文件：165.06 Kbytes Page：8 Pages

18 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance a

Fast Switching

• DESCRIPTION • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max) • Fast Switching • APPLICATIONS • Switch regulators • Switching converters, motor drivers, relay drivers

18A, 500V N-CHANNEL POWER MOSFET

文件：209.52 Kbytes Page：6 Pages

18A 500V N-channel enhanced field effect transistor

文件：817.72 Kbytes Page：6 Pages

18A竊?00V N-CHANNEL MOSFET

文件：167.03 Kbytes Page：5 Pages