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SIHF634

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VISHAYVishay Siliconix

威世威世科技公司

SIHF634

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VISHAYVishay Siliconix

威世威世科技公司

Available in Tape and Reel

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the h

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dv/dt rating;

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

STMICROELECTRONICS

意法半导体

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

STMICROELECTRONICS

意法半导体

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

STMICROELECTRONICS

意法半导体

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

STMICROELECTRONICS

意法半导体

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

STMICROELECTRONICS

意法半导体

SIHF634产品属性

  • 类型

    描述

  • 型号

    SIHF634

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Power MOSFET

更新时间:2026-8-4 18:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
Vishay
24+
NA
3000
进口原装正品优势供应
VISHAY/威世
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY/威世
2022+
TO-263
50000
原厂代理 终端免费提供样品
VISHAY/威世
25+
90000
全新原装现货
VISHAY/威世
23+
TO263
50000
全新原装正品现货,支持订货
Vishay
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VISHAY/威世
23+
TO263
50000
全新原装正品现货,支持订货
VISHAY/威世
25+
TO-263
10000
原装现货假一罚十
VISHAY/威世
25+
11534
本公司 只做全新原装正品

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