位置：首页 > IC中文资料第6097页 > SIHF634
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHF634 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHF634 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Available in Tape and Reel DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the h | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li | STMICROELECTRONICS 意法半导体 | | ||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 | | ||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 | | ||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 | |
SIHF634产品属性
- 类型
描述
- 型号
SIHF634
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SIHF640L-GE3 |
25+ |
491 |
491 |
||||
VISHAY/威世 |
24+ |
TO-220 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
Vishay |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
24+ |
TO263 |
60000 |
||||
VISHAY/威世 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
23+ |
SOT263 |
7000 |
||||
VISHAY/威世 |
25+ |
TO-263 |
10000 |
原装现货假一罚十 |
|||
N/A |
2023+ |
TO263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
N/A |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
SIHF634规格书下载地址
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DdatasheetPDF页码索引
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