位置:首页 > IC中文资料第11531页 > SIHF540S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHF540S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | ||
SIHF540S | Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas | VISHAYVishay Siliconix 威世威世科技公司 | ||
SIHF540S | Power MOSFET 文件:174.99 Kbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:216.6 Kbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:216.6 Kbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:216.6 Kbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:216.6 Kbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
丝印代码:-MG;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | PHILIPS 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency | PHILIPS 飞利浦 | |||
Octal buffer/line driver; 3-state; inverting GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI | PHILIPS 飞利浦 | |||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere) VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity | PANJIT 強茂 | |||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere) VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca | PANJIT 強茂 |
SIHF540S产品属性
- 类型
描述
- 型号
SIHF540S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJI |
模块 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VISHAY/威世通 |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
SAM |
25+ |
DIP-28 |
394 |
全新原装正品支持含税 |
|||
SAMSU |
25+ |
SOP3.9 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SIAI |
24+ |
DFN3X3-8L |
9000000 |
一级代理/放心采购 |
|||
SAMSUNG |
22+ |
SIL-10 |
3000 |
原装正品,支持实单 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
24+ |
850 |
真实现货库存 |
|||||
VIS |
23+ |
T0-263 |
7000 |
原装正品,假一罚十 |
|||
VISHAY/威世 |
23+ |
SOT263 |
7000 |
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SIHF540S规格书下载地址
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DdatasheetPDF页码索引
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