D Series Power MOSFET

FEATURES • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) • Optimal efficiency and operation - Low cost - Simple gate drive circuitry

D Series Power MOSFET

FEATURES • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) • Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (

D Series Power MOSFET

D Series Power MOSFET

FEATURES • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) • Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (

18 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance a

Fast Switching

• DESCRIPTION • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max) • Fast Switching • APPLICATIONS • Switch regulators • Switching converters, motor drivers, relay drivers

18A, 500V N-CHANNEL POWER MOSFET

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18A 500V N-channel enhanced field effect transistor

文件：817.72 Kbytes Page：6 Pages

18A竊?00V N-CHANNEL MOSFET

文件：167.03 Kbytes Page：5 Pages