EF Series Power MOSFET with Fast Body Diode

文件：216.55 Kbytes Page：9 Pages

EF Series Power MOSFET with Fast Body Diode

EF Series Power MOSFET with Fast Body Diode

文件：203.74 Kbytes Page：9 Pages

EF Series Power MOSFET with Fast Body Diode

文件：203.74 Kbytes Page：9 Pages

EF Series Power MOSFET with Fast Body Diode

文件：203.74 Kbytes Page：9 Pages

EF Series Power MOSFET with Fast Body Diode

文件：203.74 Kbytes Page：9 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 260mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Low V IGBT

Features ● International standard packages ● Low VCE(sat) - for minimum on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity Applications ● AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power sup

N-Channel Power MOSFET

文件：3.27432 Mbytes Page：8 Pages