Low V IGBT

Features ● International standard packages ● Low VCE(sat) - for minimum on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity Applications ● AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power sup

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 40A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Low VCE(sat) IGBT with Diode

Features • International standard packages • IGBT and anti-parallel FRED in one package • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible p

PolarHV IGBT

文件：72.81 Kbytes Page：2 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 40A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 260mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFET

文件：3.27432 Mbytes Page：8 Pages