LowVIGBT

Features ●Internationalstandardpackages ●LowVCE(sat) -forminimumon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersup

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 40A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

LowVCE(sat)IGBTwithDiode

Features •Internationalstandardpackages •IGBTandanti-parallelFREDinonepackage •LowVCE(sat) -forminimumon-stateconductionlosses •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers •Uninterruptiblep

PolarHVIGBT

文件：72.81 Kbytes Page：2 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 40A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=28A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

HiPerFETPowerMOSFETs

HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=260mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

N-ChannelPowerMOSFET

文件：3.27432 Mbytes Page：8 Pages