iscN-Channel MOSFET Transistor

文件：319.63 Kbytes Page：2 Pages

E Series Power MOSFET

文件：180.44 Kbytes Page：8 Pages

E Series Power MOSFET

EF Series Power MOSFET With Fast Body Diode

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •

EL Series Power MOSFET

FEATURES • Reduced figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Se

EL Series Power MOSFET

FEATURES • Reduced figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Se

EL Series Power MOSFET

FEATURES • Reduced figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Se

E Series Power MOSFET

文件：187.72 Kbytes Page：9 Pages

E Series Power MOSFET

文件：187.72 Kbytes Page：9 Pages

EF Series Power MOSFET With Fast Body Diode

E Series Power MOSFET

文件：187.72 Kbytes Page：9 Pages

iscN-Channel MOSFET Transistor

文件：320.11 Kbytes Page：2 Pages

EL Series Power MOSFET

HEXFET POWER MOSFET

DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.35Ω * Ultra Low Gate Charge

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

22A, 600V N-CHANNEL POWER MOSFET

文件：211.84 Kbytes Page：6 Pages

N-Channel MOSFET

文件：986.23 Kbytes Page：2 Pages

N-Channel MOSFET 600V, 22A, 0.165W

文件：532.87 Kbytes Page：8 Pages