型号 功能描述 生产厂家 企业 LOGO 操作
SIHA22N60AE

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世威世科技公司

SIHA22N60AE

iscN-Channel MOSFET Transistor

文件:319.97 Kbytes Page:2 Pages

ISC

无锡固电

SIHA22N60AE

E Series Power MOSFET

文件:140.97 Kbytes Page:7 Pages

VishayVishay Siliconix

威世威世科技公司

SiHA22N60AE

E Series Power MOSFET

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世威世科技公司

EL Series Power MOSFET

VishayVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.35Ω * Ultra Low Gate Charge

UTC

友顺

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

22A, 600V N-CHANNEL POWER MOSFET

文件:211.84 Kbytes Page:6 Pages

UTC

友顺

N-Channel MOSFET

文件:986.23 Kbytes Page:2 Pages

ESTEK

伊泰克电子

N-Channel MOSFET 600V, 22A, 0.165W

文件:532.87 Kbytes Page:8 Pages

Fairchild

仙童半导体

更新时间:2026-1-3 13:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
TO-220F
60000
全新原装现货
VISHAY/威世
2023+
SMD
8635
一级代理优势现货,全新正品直营店
VISHAY/威世
23+
TO-220F
50000
全新原装正品现货,支持订货
VISHAY
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
VISHAY/威世
23+
AXIAL
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
53000
一级代理-主营优势-实惠价格-不悔选择
VISHAY(威世)
2447
TO-220
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
VISHAY/威世
23+
TO-220F
50000
全新原装正品现货,支持订货
Vishay Siliconix
22+
TO2203
9000
原厂渠道,现货配单
VISHAY(威世)
24+
TO-220F
7828
支持大陆交货,美金交易。原装现货库存。

SIHA22N60AE数据表相关新闻