位置：首页 > IC中文资料 > SIHA21N60EF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHA21N60EF | EF Series Power MOSFET with Fast Body Diode FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for de | VishayVishay Siliconix 威世威世科技公司 |   | |
SIHA21N60EF | EF Series Power MOSFET with Fast Body Diode 文件：186.66 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
SIHA21N60EF | iscN-Channel MOSFET Transistor 文件：319.87 Kbytes Page：2 Pages | ISC 无锡固电 | | |
SiHA21N60EF | EF Series Power MOSFET with Fast Body Diode | VishayVishay Siliconix 威世威世科技公司 | | |
EF Series Power MOSFET with Fast Body Diode FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for de | VishayVishay Siliconix 威世威世科技公司 | | ||
EF Series Power MOSFET with Fast Body Diode FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for de | VishayVishay Siliconix 威世威世科技公司 | | ||
EF Series Power MOSFET with Fast Body Diode FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for de | VishayVishay Siliconix 威世威世科技公司 | | ||
SMPS MOSFET FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simple drive requirements. • Enhanced dV/dt capabilities offer improved ruggedness. • Higher Gate voltage threshold offers improved noise immunity. APPLICATIONS • Zero | IRF | | ||
Power MOSFET Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb) | VishayVishay Siliconix 威世威世科技公司 | | ||
Fast Switching 文件：49.85 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Super Junction Power MOSFET II 文件：1.06048 Mbytes Page：8 Pages | HMSEMI 华之美半导体 | | ||
N-Channel Super Junction Power MOSFET II 文件：1.06048 Mbytes Page：8 Pages | HMSEMI 华之美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
VISHAY(威世) |
24+ |
TO220F |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
VISHAY/威世 |
2023+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
|||
VISHAY/威世 |
2450+ |
Tube |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
VISHAY/威世 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
||||
VISHAY/威世 |
21+ |
Tube |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
Vishay(威世) |
23+ |
N/A |
11800 |
||||
VISHAY/威世 |
22+ |
Tube |
20000 |
只做原装 品质保障 |
|||
VISHAY(威世) |
2447 |
TO-220 |
105000 |
1000个/管一级代理专营品牌!原装正品,优势现货,长 |
|||
VISHAY/威世 |
21+ |
Tube |
1773 |
只做原装,一定有货,不止网上数量,量多可订货! |
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DdatasheetPDF页码索引
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