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IRFP21N60L价格
参考价格：￥26.3973
型号：IRFP21N60LPBF 品牌：Vishay 备注：这里有IRFP21N60L多少钱，2025年最近7天走势，今日出价，今日竞价，IRFP21N60L批发/采购报价，IRFP21N60L行情走势销售排行榜，IRFP21N60L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP21N60L | SMPS MOSFET FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simple drive requirements. • Enhanced dV/dt capabilities offer improved ruggedness. • Higher Gate voltage threshold offers improved noise immunity. APPLICATIONS • Zero | IRF |   | |
IRFP21N60L | Power MOSFET Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb) | VishayVishay Siliconix 威世科技 | | |
IRFP21N60L | iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.32Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFP21N60L | Power MOSFET FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simple drive requirement • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categorizati | VishayVishay Siliconix 威世科技 | | |
IRFP21N60L | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRFP21N60L | SMPS MOSFET | Infineon 英飞凌 | | |
Power MOSFET FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simple drive requirement • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categorizati | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb) | VishayVishay Siliconix 威世科技 | | ||
SMPS MOSFET FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simple drive requirements. • Enhanced dV/dt capabilities offer improved ruggedness. • Higher Gate voltage threshold offers improved noise immunity. APPLICATIONS • Zero | IRF | | ||
Fast Switching 文件：49.85 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Super Junction Power MOSFET II 文件：1.06048 Mbytes Page：8 Pages | HMSEMI 华之美半导体 | | ||
N-Channel Super Junction Power MOSFET II 文件：1.06048 Mbytes Page：8 Pages | HMSEMI 华之美半导体 | |
IRFP21N60L产品属性
- 类型
描述
- 型号
IRFP21N60L
- 功能描述
MOSFET N-Chan 600V 21 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
24+ |
标准封装 |
10048 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
IR |
24+ |
TO-247 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
NEW |
TO247 |
12335 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
25+23+ |
TO247 |
35295 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-247AC |
8866 |
||||
IR |
25+ |
TO-3P |
18000 |
原厂直接发货进口原装 |
|||
IR |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
|||
IR |
18+ |
TO-247 |
85600 |
保证进口原装可开17%增值税发票 |
|||
VISHAY |
23+ |
TO-247-3 |
2325 |
原装现货支持送检 |
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