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IRFP21N60L价格
参考价格：￥26.3973
型号：IRFP21N60LPBF 品牌：Vishay 备注：这里有IRFP21N60L多少钱，2025年最近7天走势，今日出价，今日竞价，IRFP21N60L批发/采购报价，IRFP21N60L行情走势销售排行榜，IRFP21N60L报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP21N60L | SMPSMOSFET FEATURES •SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. •LowerGatechargeresultsinsimpledriverequirements. •EnhanceddV/dtcapabilitiesofferimprovedruggedness. •HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS •Zero | IRF International Rectifier |  |   |
IRFP21N60L | PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimpleDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb) | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
IRFP21N60L | iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.32Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRFP21N60L | PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimpledrive requirement •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategorizati | VishayVishay Siliconix 威世科技威世科技半导体 | | |
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimpledrive requirement •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategorizati | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimpleDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb) | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SMPSMOSFET FEATURES •SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. •LowerGatechargeresultsinsimpledriverequirements. •EnhanceddV/dtcapabilitiesofferimprovedruggedness. •HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS •Zero | IRF International Rectifier | | | |
FastSwitching 文件：49.85 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelSuperJunctionPowerMOSFETII 文件：1.06048 Mbytes Page：8 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 |  | | |
N-ChannelSuperJunctionPowerMOSFETII 文件：1.06048 Mbytes Page：8 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | | |
IRFP21N60L产品属性
- 类型
描述
- 型号
IRFP21N60L
- 功能描述
MOSFET N-Chan 600V 21 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-247AC |
8866 |
||||
IR |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
|||
IR |
24+ |
TO-247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
18+ |
TO-247 |
85600 |
保证进口原装可开17%增值税发票 |
|||
IR |
2022+ |
TO247 |
20000 |
只做原装进口现货.假一罚十 |
|||
IR |
23+ |
TO-247 |
7000 |
||||
Vishay Siliconix |
24+ |
TO-247AC |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
VISHAY |
12+/20+/21+ |
1325 |
TO-247-3 |
||||
IR |
23+ |
TO247 |
65480 |
||||
IR |
04+ |
TO-247 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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IRFP21N60L规格书下载地址
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2019-4-26
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