iscN-Channel MOSFET Transistor

·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.202Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators

E Series Power MOSFET

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E Series Power MOSFET

E Series Power MOSFET

文件：162.58 Kbytes Page：8 Pages

E Series Power MOSFET

文件：162.58 Kbytes Page：8 Pages

POLARHV HIPERFET POWER MOSFET

DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul

Fast Switching

• FEATURES • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) • Fast Switching • APPLICATIONS • Switch mode power supply.

isc N-Channel MOSFET Transistor

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18A,600V N-CHANNEL POWER MOSFET

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600V N-CHANNEL POWER MOSFET

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