5A , 100V , RDS(ON) 170 m
N-Channel Enhancement Mode Power MOSFET

文件：2.19561 Mbytes Page：4 Pages

N-Channel 100-V (D-S) MOSFET

文件：1.05439 Mbytes Page：9 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.86802 Mbytes Page：4 Pages

N-Channel Enhancement Mode Power MOSFET

文件：2.19561 Mbytes Page：4 Pages

Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

▪Product Summary: ▪ Pin Description: N-CH 100V 5.5mΩ 7.5mΩ 122.0A 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free

Plastic-Encapsulate MOSFETS

DESCRIPTION The FQ05N10Q uses advanced trench technology and design to p rovide excellent RDS(ON) This device is suitable for use in a wide variety of applications. with low gate charge. FEATURES Lead free product is acquired Special process technology for high ESD capability High dens

N-Channel 100-V (D-S) MOSFET

文件：1.89562 Mbytes Page：9 Pages

Dual N-Channel MOSFET

文件：2.0243 Mbytes Page：5 Pages

Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：517.26 Kbytes Page：7 Pages