Dual N-Channel 2.5-V (G-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best

Dual N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETS • Compliant to RoHS Directive 2002/95/EC

Dual N-Channel 2.5-V (G-S) MOSFET

Dual N-Channel 2.5-V (G-S) MOSFET

文件：251.13 Kbytes Page：9 Pages

Dual N-Channel MOSFET

文件：499.88 Kbytes Page：2 Pages

Dual N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETS • Compliant to RoHS Directive 2002/95/EC

Dual N-Channel MOSFET

文件：525.24 Kbytes Page：2 Pages

Dual N-Channel 2.5-V (G-S) MOSFET

文件：251.13 Kbytes Page：9 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：985.9 Kbytes Page：7 Pages

Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Dual N-Channel 20-V (D-S) MOSFET

文件：996.47 Kbytes Page：7 Pages

6A竊?0V Dual N-CHANNEL MOSFET

文件：124.3 Kbytes Page：4 Pages

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：117.54 Kbytes Page：5 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：1.62045 Mbytes Page：7 Pages