丝印代码：9926；Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

丝印代码：9926；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

丝印代码：9926；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

丝印代码：9926；N-Channel Enhancement Mode Power MOSFET

General Features VDS =20V,ID =6A RDS(ON)

丝印代码：9926；Dual N-Channel, 20V,5.3A, Power MOSFET

文件：981.06 Kbytes Page：8 Pages

丝印代码：9926；Dual N-Channel, 20V,5.3A, Power MOSFET

文件：981.06 Kbytes Page：8 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：996.47 Kbytes Page：7 Pages

Trench Mosfet

场效应管(MOSFET)

20V Dual N-Channel MOSFET

Dual N-Channel MOSFET

Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.

包装：线轴 描述：HOOK-UP STRND 26AWG RED 100' 电缆，电线 单芯电缆（连接线）

包装：线轴 描述：HOOK-UP STRND 26AWG RED 1000' 电缆，电线 单芯电缆（连接线）

AC LED Technology by Lynk Labs Compatible with Phase-cut Dimmers

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AC LED Technology by Lynk Labs Compatible with Phase-cut Dimmers

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AC LED Technology by Lynk Labs Compatible with Phase-cut Dimmers

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AC LED Technology by Lynk Labs Compatible with Phase-cut Dimmers

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AC LED Technology by Lynk Labs Compatible with Phase-cut Dimmers 5 yr. Warranty

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AC LED Technology by Lynk Labs Compatible with Phase-cut Dimmers 5 yr. Warranty

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28W 120V AC 572mm Linear LED Module

文件：976.31 Kbytes Page：6 Pages

28W 120V AC 572mm Linear LED Module

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：117.54 Kbytes Page：5 Pages

6A竊?0V Dual N-CHANNEL MOSFET

文件：124.3 Kbytes Page：4 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：1.62045 Mbytes Page：7 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：982.09 Kbytes Page：7 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：982.06 Kbytes Page：7 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：982.02 Kbytes Page：7 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：982 Kbytes Page：7 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：981.93 Kbytes Page：7 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：981.89 Kbytes Page：7 Pages

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features • 20V/6A , RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 and TSSOP-8 Packages Applications • Power Manageme

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40mΩ @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TSSOP-8 for Surface Mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

Feature ● 20V/, 6A, RDS(ON) = 30mΩ(MAX) @VGS = 4.5V. RDS(ON) = 40mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package.

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Features • 6.5 A, 20 V. RDS(ON)= 0.030 Ω@ VGS= 4.5 V

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：117.54 Kbytes Page：5 Pages