位置：首页 > IC中文资料第10764页 > GTS6923
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GTS6923 | P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET 文件：333.8 Kbytes Page：4 Pages | GTM 勤益投资控股 |   | |
GTS6923 | P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET | GTM 勤益投资控股 | | |
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low On-Resistance ▼ Fast Switching Characteristic ▼ Included Schottky Diode | A-POWER 富鼎先进电子 | | ||
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter | FAIRCHILD 仙童半导体 | | ||
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter | FAIRCHILD 仙童半导体 | | ||
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter | FAIRCHILD 仙童半导体 | |
GTS6923产品属性
- 类型
描述
- 型号
GTS6923
- 制造商
GTM
- 制造商全称
GTM
- 功能描述
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
GTS6923规格书下载地址
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DdatasheetPDF页码索引
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