P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter

P-Channel 2.5V Specified PowerTrench??MOSFET with Schottky Diode

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P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

P-Channel 2.5V Specified PowerTrench??MOSFET with Schottky Diode

文件：267.01 Kbytes Page：5 Pages

P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low On-Resistance ▼ Fast Switching Characteristic ▼ Included Schottky Diode

ANX6923资料

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Dual P-Channel 12-V (D-S) MOSFET

文件：186.01 Kbytes Page：5 Pages

Simple Drive Requirement, Easy for Synchronous Buck Converter Application

文件：135.89 Kbytes Page：7 Pages

Dual-Channel Low Noise Amplifier 13.75 ??17.3 GHz

文件：127.39 Kbytes Page：3 Pages