General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications.

Features

• –3.5 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V RDS(ON) = 0.075 Ω @ VGS = –2.5 V

• VF < 0.55 V @ 1 A

• High performance trench technology for extremely low RDS(ON)

• Low profile TSSOP-8 package

Applications

• DC/DC conversion