30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS

30V Complementary PowerTrench MOSFET

30V Complementary PowerTrench MOSFET

General Description\nThis complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Q1: N-Channel\n   6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V\n                RDS(on) = 35 mΩ @ VGS = 4.5V\n• Q2: P-Channel\n   –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V\n                   RDS(on) = 45 mΩ @ VGS = –4.5VApplications\n• DC/DC converter\n• Power management ;

30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS

30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS

N- and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N- and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N- and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

N-and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N&P-Channel Complementary MOSFET

General Features «+ N-Channel © Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V «High Power and current handing capabilly «Lead ree products acquired « Surace Mount Package Application

Low-Voltage, Single-Supply Dual SPST/SPDT Analog Switches

The MAX4541–MAX4544 are precision, dual analog switches designed to operate from a single +2.7V to +12V supply. Low power consumption (5µW) makes these parts ideal for battery-powered equipment. These switches offer low leakage currents (100pA max) and fast switching speeds (tON= 150ns max, tOFF=

Low-Voltage, Single-Supply Dual SPST/SPDT Analog Switches

The MAX4541–MAX4544 are precision, dual analog switches designed to operate from a single +2.7V to +12V supply. Low power consumption (5µW) makes these parts ideal for battery-powered equipment. These switches offer low leakage currents (100pA max) and fast switching speeds (tON= 150ns max, tOFF=