General Description

This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• Q1: N-Channel

6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 35 mΩ @ VGS = 4.5V

• Q2: P-Channel

–6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V RDS(on) = 45 mΩ @ VGS = –4.5V

Applications

• DC/DC converter

• Power management