专有 EZRadioPRO 1 GHz 以下无线 IC

Si4463 EZRadioPRO ISM 波段支持 142 至 1050 MHz 的频率范围和 -20 至 20 dBm 的输出功率范围。Si4463 采用 QFN20 封装。\n\n\n\n Si4x6x-C2A 无线电代表了最新一代的 EZRadioPRO 系列，与旧的 Si4x6x-B1B 版本相比，性能更高、新功能更强大、更灵活、更简单、成本更低。

HIGH-PERFORMANCE

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HIGH-PERFORMANCE, LOW-CURRENT TRANSCEIVER

文件：1.52677 Mbytes Page：53 Pages

HIGH-PERFORMANCE

文件：859.87 Kbytes Page：56 Pages

HIGH-PERFORMANCE, LOW-CURRENT TRANSCEIVER

文件：1.33313 Mbytes Page：53 Pages

WIRELESS PRODUCT SELECTOR GUIDE

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WIRELESS PRODUCT SELECTOR GUIDE

文件：1.72393 Mbytes Page：12 Pages

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-13.7 A (VGS =-10V) ● RDS(ON)

P-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs

P-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-13.7 A (VGS =-10V) ● RDS(ON)

P-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 1800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Sw

P-Channel 40 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switches, adaptor switch - Notebook PCs

P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –11.5 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V

P-Channel 2.5V Specified PowerTrench MOSFET

General Description\nThis P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –11.5 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V\n                       RDS(ON) = 17.5 mΩ @ VGS = –2.5 V\n• Fast switching speed.\n• High performance trench technology for extremely low RDS(ON)\n• High power and current handling capabilityApplications\n• Power management\n• Load switch\n• Battery p;

WIRELESS PRODUCT SELECTOR GUIDE

文件：1.72393 Mbytes Page：12 Pages

封装/外壳：20-VFQFN 裸露焊盘 包装：托盘 描述：IC RF TXRX+MCU ISM\u003c1GHZ 20VFQFN RF/IF，射频/中频和 RFID 射频收发器 IC

Version 1.2 of the Si4464-63-61-60 datasheet is now available

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封装/外壳：20-VFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF TXRX+MCU ISM\u003c1GHZ 20VFQFN RF/IF，射频/中频和 RFID 射频收发器 IC

P-Channel 2.5-V (G-S) MOSFET

文件：166.66 Kbytes Page：8 Pages

HIGH-PERFORMANCE, LOW-CURRENT TRANSCEIVER

文件：1.07901 Mbytes Page：56 Pages

HIGH-PERFORMANCE, LOW-CURRENT TRANSCEIVER

文件：1.33313 Mbytes Page：53 Pages

P-Channel 2.5 V (G-S) MOSFET

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P-Channel 2.5 V (G-S) MOSFET

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P-Channel 2.5 V (G-S) MOSFET

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P-Channel 2.5 V (G-S) MOSFET

P-Channel 2.5 V (G-S) MOSFET

文件：173.21 Kbytes Page：9 Pages

P-Channel 2.5 V (G-S) MOSFET

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P-Channel 30-V (D-S) MOSFET

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ACT 4453 / 4463 SINGLE SUPPLY TRANSCEIVERS FOR MIL-STD-1553/1760

General Description: The Aeroflex Circuit Technology ACT4453 / 4463 series are next generation monolithic transceiver designs which provides full compliance with MIL-STD-1553A/B and 1760 requirements in the smallest packages with low power consumption and single power supply operation. Features

DC-3500 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER

[Stanford-Microdevices] Product Description Stanford Microdevices SGA-4463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage

DC-3500 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER

Product Description Stanford Microdevices SGA-4463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junction

This 1.5 Watt Zener series in a low-profile light-weight plastic surface Mount Configuration

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