DC-3500 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER

[Stanford-Microdevices] Product Description Stanford Microdevices SGA-4463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage

DC-3500 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER

Product Description Stanford Microdevices SGA-4463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junction

DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier

Product Description The SGA-4463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of

DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier

Product Description The SGA-4463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of

ACT 4453 / 4463 SINGLE SUPPLY TRANSCEIVERS FOR MIL-STD-1553/1760

General Description: The Aeroflex Circuit Technology ACT4453 / 4463 series are next generation monolithic transceiver designs which provides full compliance with MIL-STD-1553A/B and 1760 requirements in the smallest packages with low power consumption and single power supply operation. Features

P-Channel Enhancement Mode MOSFET

Features • -20V/-10A, RDS(ON)=12mΩ (typ.) @ VGS=-4.5V RDS(ON)=18mΩ (typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Syst

P-Channel Enhancement Mode MOSFET

Features • -20V/-10A, RDS(ON)=12mΩ (typ.) @ VGS=-4.5V RDS(ON)=18mΩ (typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Syst

Isolation Transformer

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P-Channel 20-V (D-S) MOSFET

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