P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –11.5 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V

P-Channel 2.5V Specified PowerTrench MOSFET

General Description\nThis P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –11.5 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V\n                       RDS(ON) = 17.5 mΩ @ VGS = –2.5 V\n• Fast switching speed.\n• High performance trench technology for extremely low RDS(ON)\n• High power and current handling capabilityApplications\n• Power management\n• Load switch\n• Battery p;

ACT 4453 / 4463 SINGLE SUPPLY TRANSCEIVERS FOR MIL-STD-1553/1760

General Description: The Aeroflex Circuit Technology ACT4453 / 4463 series are next generation monolithic transceiver designs which provides full compliance with MIL-STD-1553A/B and 1760 requirements in the smallest packages with low power consumption and single power supply operation. Features

DC-3500 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER

[Stanford-Microdevices] Product Description Stanford Microdevices SGA-4463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage

DC-3500 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER

Product Description Stanford Microdevices SGA-4463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junction

This 1.5 Watt Zener series in a low-profile light-weight plastic surface Mount Configuration

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