No alignment required in production

文件：1.42884 Mbytes Page：33 Pages

专有 EZRadio 1 GHz 以下无线 IC

N-Channel, 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

Single N-Channel Logic Level PowerTrencha MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4420DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor

N-Channel, 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested

HEXFET Power MOSFET

Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO

HEXFET

Power MOSFET

Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

N-Channel 30-V (D-S) MOSFET

文件：185.16 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：103.88 Kbytes Page：6 Pages

N-Channel 30-V (D-S) MOSFET

文件：186.8 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：103.88 Kbytes Page：6 Pages

N-Channel 30-V (D-S) MOSFET

文件：186.8 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：185.16 Kbytes Page：8 Pages

Si4420 Universal ISM Band FSK Transceiver

文件：620.03 Kbytes Page：33 Pages

封装/外壳：16-TSSOP（0.173"，4.40mm 宽） 包装：托盘 描述：IC RF TXRX ISM\u003c1GHZ 16TSSOP RF/IF，射频/中频和 RFID 射频收发器 IC

封装/外壳：16-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC RF TXRX ISM\u003c1GHZ 16TSSOP RF/IF，射频/中频和 RFID 射频收发器 IC

Si4420 Universal ISM Band FSK Transceiver

文件：620.03 Kbytes Page：33 Pages

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Single N-Channel Logic Level PowerTrencha MOSFET

Simple Drive Requirements

文件：119.92 Kbytes Page：8 Pages

Simple Drive Requirements

文件：119.92 Kbytes Page：8 Pages

RECTIFIERS

RECTIFIERS Fast Recovery, 6 Amp to 9 Amp

N-Channel 30-V (D-S) MOSFET

文件：1.01364 Mbytes Page：9 Pages

Thick Film Surface Mounted Wide Body Tape and reel packaging standard

文件：235.57 Kbytes Page：2 Pages

Networks

文件：63.61 Kbytes Page：1 Pages

Networks

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