SI4420DY价格

参考价格:¥3.8808

型号:SI4420DYPBF 品牌:IR 备注:这里有SI4420DY多少钱,2025年最近7天走势,今日出价,今日竞价,SI4420DY批发/采购报价,SI4420DY行情走势销售排行榜,SI4420DY报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SI4420DY

N-Channel, 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested

VishayVishay Siliconix

威世威世科技公司

SI4420DY

HEXFET Power MOSFET

Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO

IRF

SI4420DY

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4420DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor

Philips

飞利浦

SI4420DY

Single N-Channel Logic Level PowerTrencha MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery

Fairchild

仙童半导体

SI4420DY

Power MOSFETs

NEXPERIA

安世

Si4420DY

N-Channel 30-V (D-S) MOSFET

VishayVishay Siliconix

威世威世科技公司

SI4420DY

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Infineon

英飞凌

HEXFETPower MOSFET

Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO

IRF

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

Simple Drive Requirements

文件:119.92 Kbytes Page:8 Pages

IRF

Simple Drive Requirements

文件:119.92 Kbytes Page:8 Pages

IRF

RECTIFIERS

RECTIFIERS Fast Recovery, 6 Amp to 9 Amp

Microsemi

美高森美

N-Channel 30-V (D-S) MOSFET

文件:1.01364 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Thick Film Surface Mounted Wide Body Tape and reel packaging standard

文件:235.57 Kbytes Page:2 Pages

Bourns

伯恩斯

Networks

文件:63.61 Kbytes Page:1 Pages

Bourns

伯恩斯

Networks

文件:29.03 Kbytes Page:2 Pages

Bourns

伯恩斯

SI4420DY产品属性

  • 类型

    描述

  • 型号

    SI4420DY

  • 功能描述

    MOSFET 30V 400a N-Ch MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-17 23:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
24+
SOP-8
8000
只做原装正品现货
Vishay(威世)
24+
标准封装
10048
原厂直销,大量现货库存,交期快。价格优,支持账期
IR
2016+
SOP8
1000
只做原装,假一罚十,公司可开17%增值税发票!
VISHAY
23+
SOP8
20000
全新原装假一赔十
VISHAY/威世
22+
SOP-8
100000
代理渠道/只做原装/可含税
INFINEON/英飞凌
23+
SO8
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
VISHAY
24+
170
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
VISHAY/威世
25+
SOP-8
39574
VISHAY/威世全新特价Si4420DY-T1-E3即刻询购立享优惠#长期有货
VISHAY
0627+
SOP8
2070
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY/威世
23+
SOP-8
50000
只做原装正品

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