SI4420DY价格

参考价格:¥3.8808

型号:SI4420DYPBF 品牌:IR 备注:这里有SI4420DY多少钱,2025年最近7天走势,今日出价,今日竞价,SI4420DY批发/采购报价,SI4420DY行情走势销售排行榜,SI4420DY报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SI4420DY

Single N-Channel Logic Level PowerTrencha MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SI4420DY

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4420DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor

Philips

飞利浦

SI4420DY

N-Channel, 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested

VishayVishay Siliconix

威世科技

SI4420DY

HEXFET Power MOSFET

Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO

IRF

SI4420DY

Power MOSFETs

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Si4420DY

N-Channel 30-V (D-S) MOSFET

VishayVishay Siliconix

威世科技

SI4420DY

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Infineon

英飞凌

HEXFETPower MOSFET

Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO

IRF

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

Simple Drive Requirements

文件:119.92 Kbytes Page:8 Pages

IRF

Simple Drive Requirements

文件:119.92 Kbytes Page:8 Pages

IRF

RECTIFIERS

RECTIFIERS Fast Recovery, 6 Amp to 9 Amp

Microsemi

美高森美

N-Channel 30-V (D-S) MOSFET

文件:1.01364 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Thick Film Surface Mounted Wide Body Tape and reel packaging standard

文件:235.57 Kbytes Page:2 Pages

Bourns

伯恩斯

Networks

文件:63.61 Kbytes Page:1 Pages

Bourns

伯恩斯

Networks

文件:29.03 Kbytes Page:2 Pages

Bourns

伯恩斯

SI4420DY产品属性

  • 类型

    描述

  • 型号

    SI4420DY

  • 功能描述

    MOSFET 30V 400a N-Ch MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-26 15:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
2019+
SOP8
18000
原厂渠道 可含税出货
VBSEMI台湾微碧
23+
TO-252
22820
原装正品,支持实单
IR
新年份
SOP-8
33288
原装正品现货,实单带TP来谈!
FSC/ON
23+
原包装原封 □□
1105
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
SHARP
ROHS全新原装
SOP8
257000
东芝半导体QQ350053121正纳全系列代理经销
VISHAY/威世
25+
NCh.
880000
明嘉莱只做原装正品现货
VISHAY
2024+
SOP-8
50000
原装现货
VISHAY/威世
25+
SOIC-8
6820
价格优势 支持实单
VISHAY/威世
24+
SOP8
21000
只做原装进口现货
VISHAY
0312/0320
2450
优势货源原装正品

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