SI4420DY价格
参考价格:¥3.8808
型号:SI4420DYPBF 品牌:IR 备注:这里有SI4420DY多少钱,2026年最近7天走势,今日出价,今日竞价,SI4420DY批发/采购报价,SI4420DY行情走势销售排行榜,SI4420DY报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SI4420DY | N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4420DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor | PHILIPS 飞利浦 | ||
SI4420DY | Single N-Channel Logic Level PowerTrencha MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery | FAIRCHILD 仙童半导体 | ||
SI4420DY | N-Channel, 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested | VISHAYVishay Siliconix 威世威世科技公司 | ||
SI4420DY | HEXFET Power MOSFET Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO | IRF | ||
SI4420DY | 30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装 \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 低开关耗能\n• 低通态损耗; | INFINEON 英飞凌 | ||
SI4420DY | Power MOSFETs | NEXPERIA 安世 | ||
Si4420DY | N-Channel 30-V (D-S) MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | ||
HEXFETPower MOSFET Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO | IRF | |||
N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | |||
Simple Drive Requirements 文件:119.92 Kbytes Page:8 Pages | IRF | |||
Simple Drive Requirements 文件:119.92 Kbytes Page:8 Pages | IRF | |||
6A HIGH-SPEED MOSFET DRIVERS 文件:64.75 Kbytes Page:5 Pages | TELCOM | |||
6A HIGH-SPEED MOSFET DRIVERS 文件:64.75 Kbytes Page:5 Pages | TELCOM | |||
6A HIGH-SPEED MOSFET DRIVERS 文件:64.75 Kbytes Page:5 Pages | TELCOM | |||
Resistor LED for 12 V Supply Voltage 文件:107.03 Kbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 |
SI4420DY产品属性
- 类型
描述
- Package :
SO-8
- VDS max:
30.0V
- RDS (on) max:
9.0mΩ
- RDS (on)(@10V) max:
9.0mΩ
- RDS (on)(@4.5V) max:
13.0mΩ
- Polarity :
N
- ID (@ TA=70°C) max:
10.0A
- ID (@ TA=25°C) max:
12.5A
- Ptot(@ TA=25°C) max:
2.5W
- QG :
52.0nC
- RthJA max:
50.0K/W
- Mounting :
SMD
- Moisture Sensitivity Level :
1
- Qgd :
12.0nC
- Tj max:
150.0°C
- VGS max:
20.0V
- Ciss :
2240.0pF
- Coss :
1100.0pF
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILICONIX |
24+ |
SOP-8 |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
SHARP |
ROHS全新原装 |
SOP8 |
257000 |
东芝半导体QQ350053121正纳全系列代理经销 |
|||
SILICONIX |
23+ |
SOP8 |
7512 |
绝对全新原装!现货!特价!请放心订购! |
|||
VISHAI |
23+ |
SOP-8 |
40000 |
专做原装正品,假一罚百! |
|||
VISHAY |
18+ |
SOP8 |
85600 |
保证进口原装可开17%增值税发票 |
|||
VISHAY |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
VISHAY |
25+23+ |
SMD8 |
36693 |
绝对原装正品全新进口深圳现货 |
|||
Infineon Technologies |
23+ |
8-soic |
6996 |
只做原装正品现货 |
|||
INFINEON/英飞凌 |
23+ |
SO8 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
SILICONIX |
22+ |
SOP8 |
3000 |
原装正品,支持实单 |
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SI4420DY规格书下载地址
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DdatasheetPDF页码索引
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