Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 UIS Tested • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC

Dual N-Channel 30-V (D-S) MOSFET

文件：247.8 Kbytes Page：10 Pages

Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 UIS Tested • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC

Dual N-Channel 30-V (D-S) MOSFET

文件：247.8 Kbytes Page：10 Pages

10-Gbps GaAs Frequency Divider ICs

INTRODUCTION Oki Semiconductor’s KGL4208, KGL4209, and KGL4210 are 10-Gbps GaAs frequency divider ICs that are designed for ultra high-speed digital communications systems. The KGL4208, KGL4209, and KGL4210 are 1/4, 1/8, and 1/16 frequency dividers ICs respectively. These 10-Gbps frequency di

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UNR1210(UN1210) × 2 elemen

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 100 Volt VDS * RDS(on)= 1.5Ω * Spice model available