P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-12V ● ID =-5.1A (VGS =-4.5V) ● RDS(ON)

丝印代码：20P7C；20V P-Channel Enhancement Mode MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

丝印代码：03GDD；P-Channel 12 V (D-S) MOSFET

APPLICATIONS • Load Switch • PA Switch

场效应管

P-Channel 12-V (D-S) MOSFET

P-Channel 12-V (D-S) MOSFET

文件：229.98 Kbytes Page：9 Pages

P-Channel 12 V (D-S) MOSFET

文件：201.32 Kbytes Page：8 Pages

丝印代码：O3***；P-Channel 12-V (D-S) MOSFET

文件：104.3 Kbytes Page：6 Pages

P-Channel MOSFET

■ Features ● VDS (V) =-12V ● ID =-5.1A (VGS =-4.5V) ● RDS(ON)

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 12-V (D-S) MOSFET

文件：229.98 Kbytes Page：9 Pages

P-Channel Enhancement MOSFET

文件：2.00445 Mbytes Page：5 Pages

P-Channel MOSFET

文件：1.92862 Mbytes Page：5 Pages

P-Channel 12 V (D-S) MOSFET

文件：201.32 Kbytes Page：8 Pages

P-Channel 12-V (D-S) MOSFET

文件：104.3 Kbytes Page：6 Pages

P-Channel 12-V (D-S) MOSFET

文件：225.58 Kbytes Page：9 Pages

P-Channel 12 V (D-S) MOSFET

文件：201.32 Kbytes Page：8 Pages

丝印代码：E3***；P-Channel 12-V (D-S) MOSFET

文件：243.12 Kbytes Page：3 Pages

High Speed Switching Application

High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load

Silicon NPN Power Transistor for Switching Power Applications

Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica