丝印代码：A3***；P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY VDS (V)     rDS(on) (Ω)                   ID (A) –30          0.240 @ VGS = –10 V     –1.7                 0.460 @ VGS = –4.5 V    –1.3

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● RDS(ON)

P-Channel 30-V (D-S) Rated MOSFET

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● RDS(ON)

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel MOSFET

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DUAL PRECISION MICROPOWER CMOS VOLTAGE COMPARATOR WITH DRIVER

GENERAL DESCRIPTION The ALD2303A/ALD2303 is a precision monolithic high performance dual voltage comparator built with advanced silicon gate CMOS technology. It features very high typical input impedance of 1012Ω; low input bias current of 10pA; very low power dissipation of 7.5µA per comparator;

DUAL PRECISION MICROPOWER CMOS VOLTAGE COMPARATOR WITH DRIVER

GENERAL DESCRIPTION The ALD2303A/ALD2303 is a precision monolithic high performance dual voltage comparator built with advanced silicon gate CMOS technology. It features very high typical input impedance of 1012Ω; low input bias current of 10pA; very low power dissipation of 7.5µA per comparator;

Silicon NPN Transistor Horizontal Deflection

Description: The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen black and white deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Switching Times with Inductive Loads: tf =

BASE BAND INTERFACE IC

文件：195.84 Kbytes Page：5 Pages

BASE BAND INTERFACE IC

文件：195.84 Kbytes Page：5 Pages