位置：首页 > IC中文资料第603页 > SI2301
SI2301价格
参考价格：￥0.5460
型号：SI2301BDS 品牌：VISHAY 备注：这里有SI2301多少钱，2026年最近7天走势，今日出价，今日竞价，SI2301批发/采购报价，SI2301行情走势销售排行榜，SI2301报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SI2301 | P-Channel Enhancement Mode Field Effect Transistor Features • Halogen free available upon request by adding suffix -HF • -20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • High Speed Switching • SOT-23 Package • Marking Code: S1 • Epox | MCC |   | |
SI2301 | Plastic-Encapsulate Mosfets Plastic-Encapsulate Mosfets FEATURES • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Case Material: Molded Plastic. | HOTTECH 合科泰 | | |
SI2301 | High dense cell design for extremely low RDS(ON) Plastic-Encapsulate Mosfets FEATURES • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Case Material: Molded Plastic. | MAKOSEMI 美科半导体 | | |
SI2301 | P- CHANNEL MOSFET in a SOT-23 Plastic Package Descriptions P- CHANNEL MOSFET in a SOT-23 Plastic Package. Features Trench FET Power MOSFET 100 Rg Tested. Applications Primarily the display screen drive applications. | FOSHAN 蓝箭电子 | | |
SI2301 | P-Channel Enhancement Mode MOSFET Feature ● -20V/-3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V. ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applications ● Power Management Portable Equipment and Battery | ZPSEMIZP Semiconductor 至尚臻品 | | |
SI2301 | P-Channel Enhancement Mode Field Effect Transistor 文件：330.46 Kbytes Page：5 Pages | MCC | | |
SI2301 | Small Signal MOSFETS | MCC | | |
丝印代码：A01；P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | UMW 友台半导体 | | ||
丝印代码：A01；P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | EVVOSEMI 翊欧 | | ||
丝印代码：2301；P-Channel Enhancement-Mode MOS FETs Application @Battery protection @ Load switch @ Power management | TECHPUBLIC 台舟电子 | | ||
P-Channel 2.5-V (G-S) MOSFET P-Channel 2.5-V (G-S) MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：A1SHB；MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | EVVOSEMI 翊欧 | | ||
丝印代码：A1SHB；P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | UMW 友台半导体 | | ||
P-Channel 2.5-V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：L1***；P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
丝印代码：L1***；P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：L1***；P-Channel 2.5-V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：2301；P-Channel Enhancement-Mode MOS FETs Application @Batery protection @Load switch @Power management | TECHPUBLIC 台舟电子 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel 2.5-V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：2301；P-Channel Enhancement-Mode MOS FETs Application @Battery protection ®Load switch @ Power management | TECHPUBLIC 台舟电子 | | ||
丝印代码：N1***；P-Channel 20-V (D-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 20-V (D-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 20-V (D-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 20 V (D-S) MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：2301；P-Channel Enhancement-Mode MOS FETs Application Battery protection Load switch Power management | TECHPUBLIC 台舟电子 | | ||
丝印代码：A1***；P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) -20 0.130 @ VGS = -4.5 V -2.3 0.190 @ VGS = -2.5 V -1.9 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) -20 0.130 @ VGS = -4.5 V -2.3 0.190 @ VGS = -2.5 V -1.9 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：330.46 Kbytes Page：5 Pages | MCC | | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：267.82 Kbytes Page：5 Pages | MCC | | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：285.47 Kbytes Page：5 Pages | MCC | | ||
Triple-Supply Power Management IC for Powering FPGAs and DSPs 文件：1.31298 Mbytes Page：29 Pages | TI 德州仪器 | | ||
P-Channel 2.5-V (G-S) MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.03517 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Small Signal MOSFETS | MCC | | ||
P-Channel 2.5 V (G-S) MOSFET 文件：180.06 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：L1***；P-Channel 2.5-V (G-S) MOSFET 文件：93.77 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 2.5-V (G-S) MOSFET 文件：93.77 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 2.5 V (G-S) MOSFET 文件：180.06 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.03515 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 20 V (D-S) MOSFET 文件：165.81 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 20 V (D-S) MOSFET 文件：165.81 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 20 V (D-S) MOSFET 文件：203.38 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 20 V (D-S) MOSFET 文件：203.38 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.03514 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.035119 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin | NTE | | ||
Reflective Photosensor 文件：49.97 Kbytes Page：2 Pages | PANASONIC 松下 | | ||
PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications 文件：225.65 Kbytes Page：14 Pages | NSC 国半 | |
SI2301产品属性
- 类型
描述
- 型号
SI2301
- 功能描述
MOSFET -20V -2.8A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
SOT-23 |
47700 |
VISHAY/威世全新特价Si2301DS-T1-E3即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
VISHAY/威世 |
25+ |
SOT-23 |
285000 |
全新原装现货特价销售,欢迎来电查询 |
|||
台产 |
24+ |
SOT23SOT523SOT723 |
2000 |
全新原装深圳仓库现货有单必成 |
|||
VISHAY/威世 |
25+ |
300000 |
现货现货现货,滚动式排单供货 |
||||
VISHAY/威世 |
25+ |
SOT23 |
33500 |
全新进口原装现货,假一罚十 |
|||
VISHAY |
24+ |
SOT23 |
15800 |
绝对原装现货,价格低,欢迎询购! |
|||
VISHAY/威世 |
25+ |
SOT-23 |
15000 |
只做进口原装假一罚百 |
|||
25+ |
70 |
公司现货库存 |
|||||
MCC(美微科) |
SOT-23-3 |
4898 |
全新原装正品现货可开票 |
SI2301规格书下载地址
SI2301参数引脚图相关
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- st70
- st18
- sst25vf040
- sr2m
- spwm
- spice模型
- spd
- sp3232
- soc
- smd
- sl11
- sk100
- sja1000
- sig
- SI2434
- SI2433
- SI2415
- SI2414
- SI2404
- SI2403
- SI2401
- SI2400
- SI2321
- SI2312
- SI2310
- SI2307
- SI2306
- SI2305B
- SI2305
- SI2304
- SI2303BDS-T1-E3-CUTTAPE
- SI2303BDS-T1-E3
- SI2303BDS
- SI2303ADS
- SI2303
- SI2302-TP
- SI2302DS
- SI2302DDS-T1-GE3
- SI2302CDS-T1-GE3-CUTTAPE
- SI2302CDS-T1-GE3
- SI2302CDS-T1-E3
- SI2302ADS-T1-E3
- SI2302A
- SI2302
- SI2301-TP
- SI2301DS
- SI2301CDS-T1-GE3-CUTTAPE
- SI2301CDS-T1-GE3
- SI2301CDS-T1-E3
- SI2301BDS-T1-GE3
- SI2301BDS-T1-E3-CUTTAPE
- SI2301BDS-T1-E3
- SI2301BDS
- SI2301A
- SI2300DS-T1-GE3
- SI2300
- SI220M450
- SI220M200
- SI2202
- SI2200M50
- SI2200M100
- SI2200
- SI2185
- SI2182-A55-GM
- SI21822-A50-GM
- SI2178
- SI2177
- SI2176
- SI2173-A40-GM
- SI2169-C55-GM
- SI2169-A30-GM
- SI2167-B20-GM
- SI2165
- SI2158
- SI2157
- SI2156
- SI2151
- SI2148-A20-GM
- SI2148
- SI2147
- SI2144
- SI2141
- SI2124
- SI2115
- Si2113
- Si2111
- SI1967DH-T1-GE3
- SI1967DH-T1-E3
- SI1965DH-T1-GE3
- SI1965DH-T1-E3
- SI1958DH-T1-E3
- SI1926DL-T1-E3
- SI1922EDH-T1-GE3
- SI1917EDH-T1-E3
SI2301数据表相关新闻
SI2301BDS-T1-E3
SI2301BDS-T1-E3 SOT23 P沟道 MOS场效应管 原装现货SI2301BDS
2022-1-4SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
2020-7-17SI2300DS-T1-GE3
SI2300DS-T1-GE3
2020-7-17SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
2020-7-14SI2300DS-T1-GE3
SI2300DS-T1-GE3
2020-6-19SI2300DS-T1-GE3
SI2300DS-T1-GE3
2020-5-11
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
