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SI2301价格
参考价格：￥0.5460
型号：SI2301BDS 品牌：VISHAY 备注：这里有SI2301多少钱，2025年最近7天走势，今日出价，今日竞价，SI2301批发/采购报价，SI2301行情走势销售排行榜，SI2301报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SI2301 | P-Channel Enhancement Mode Field Effect Transistor Features • Halogen free available upon request by adding suffix -HF • -20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • High Speed Switching • SOT-23 Package • Marking Code: S1 • Epox | MCC |   | |
SI2301 | P-Channel Enhancement Mode MOSFET Feature ● -20V/-3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V. ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applications ● Power Management Portable Equipment and Battery | ZPSEMIZP Semiconductor 至尚臻品 | | |
SI2301 | High dense cell design for extremely low RDS(ON) Plastic-Encapsulate Mosfets FEATURES • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Case Material: Molded Plastic. | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 | | |
SI2301 | P- CHANNEL MOSFET in a SOT-23 Plastic Package Descriptions P- CHANNEL MOSFET in a SOT-23 Plastic Package. Features Trench FET Power MOSFET 100 Rg Tested. Applications Primarily the display screen drive applications. | FOSHAN 蓝箭电子 | | |
SI2301 | Plastic-Encapsulate Mosfets Plastic-Encapsulate Mosfets FEATURES • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Case Material: Molded Plastic. | HOTTECH 合科泰 | | |
SI2301 | Small Signal MOSFETS | MCC | | |
SI2301 | P-Channel Enhancement Mode Field Effect Transistor 文件：330.46 Kbytes Page：5 Pages | MCC | | |
P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | UMW 友台半导体 | | ||
P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | EVVOSEMI 翊欧 | | ||
P-Channel Enhancement-Mode MOS FETs Application @Battery protection @ Load switch @ Power management | TECHPUBLIC 台舟电子 | | ||
P-Channel 2.5-V (G-S) MOSFET P-Channel 2.5-V (G-S) MOSFET | VishayVishay Siliconix 威世科技 | | ||
P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | UMW 友台半导体 | | ||
MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | EVVOSEMI 翊欧 | | ||
P-Channel 2.5-V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技 | | ||
P-Channel 2.5-V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技 | | ||
P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技 | | ||
P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel Enhancement-Mode MOS FETs Application @Batery protection @Load switch @Power management | TECHPUBLIC 台舟电子 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel 2.5-V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技 | | ||
P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技 | | ||
P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技 | | ||
P-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch | VishayVishay Siliconix 威世科技 | | ||
P-Channel 20-V (D-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技 | | ||
P-Channel Enhancement-Mode MOS FETs Application @Battery protection ®Load switch @ Power management | TECHPUBLIC 台舟电子 | | ||
P-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch | VishayVishay Siliconix 威世科技 | | ||
P-Channel 20-V (D-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技 | | ||
P-Channel 20-V (D-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技 | | ||
P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) -20 0.130 @ VGS = -4.5 V -2.3 0.190 @ VGS = -2.5 V -1.9 | VishayVishay Siliconix 威世科技 | | ||
P-Channel Enhancement-Mode MOS FETs Application Battery protection Load switch Power management | TECHPUBLIC 台舟电子 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | | ||
P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) -20 0.130 @ VGS = -4.5 V -2.3 0.190 @ VGS = -2.5 V -1.9 | VishayVishay Siliconix 威世科技 | | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：330.46 Kbytes Page：5 Pages | MCC | | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：267.82 Kbytes Page：5 Pages | MCC | | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：285.47 Kbytes Page：5 Pages | MCC | | ||
Triple-Supply Power Management IC for Powering FPGAs and DSPs 文件：1.31298 Mbytes Page：29 Pages | TI 德州仪器 | | ||
P-Channel 2.5-V (G-S) MOSFET | VishayVishay Siliconix 威世科技 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.03517 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Small Signal MOSFETS | MCC | | ||
P-Channel 2.5-V (G-S) MOSFET 文件：93.77 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
P-Channel 2.5 V (G-S) MOSFET 文件：180.06 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
P-Channel 2.5-V (G-S) MOSFET 文件：93.77 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
P-Channel 2.5 V (G-S) MOSFET 文件：180.06 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.03515 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 20 V (D-S) MOSFET 文件：165.81 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
P-Channel 20 V (D-S) MOSFET 文件：165.81 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
P-Channel 20 V (D-S) MOSFET 文件：203.38 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
P-Channel 20 V (D-S) MOSFET 文件：203.38 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.03514 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.035119 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Vibrating level switch The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt | BURKERT 宝帝流体控制系统 | | ||
1.5 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed | GHZTECH | | ||
SOT-23 Plastic-Encapsulate MOSFETS 文件：5.03147 Mbytes Page：5 Pages | DGNJDZ 南晶电子 | | ||
10V P-Channel Enhanced MOS FET 文件：171.02 Kbytes Page：3 Pages | FUMAN 富满微 | |
SI2301产品属性
- 类型
描述
- 型号
SI2301
- 功能描述
MOSFET -20V -2.8A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
24+ |
标准封装 |
19048 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
VISHAY |
2016+ |
SOT23-3 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VISHAY/威世 |
25+ |
SOT-23 |
47700 |
VISHAY/威世全新特价Si2301DS-T1-E3即刻询购立享优惠#长期有货 |
|||
VISHAY |
21+ |
SOT-23 |
6880 |
只做原装,质量保证 |
|||
VISHAY |
24+ |
SOT-3 |
26200 |
原装现货,诚信经营! |
|||
VISHAY/威世 |
23+ |
SOT-23 |
15000 |
只做进口原装假一罚百 |
|||
VISHAY |
12+ |
SOT-23 |
6000 |
原装正品现货 |
|||
VISHAY/威世 |
24+ |
SOT-23 |
502026 |
免费送样原盒原包现货一手渠道联系 |
|||
VISHAY |
23+/24+ |
SOT-23 |
9865 |
优势库存.原装正品.终端BOM表可配单 |
|||
VISHAY |
24+ |
SOT23 |
15800 |
绝对原装现货,价格低,欢迎询购! |
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SI2301数据表相关新闻
SI2301BDS-T1-E3
SI2301BDS-T1-E3 SOT23 P沟道 MOS场效应管 原装现货SI2301BDS
2022-1-4SI2301CDS-T1-GE3
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2020-5-11
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