位置:首页 > IC中文资料 > SI2301DS-HF
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SI2301DS-HF | P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信电子 | |||
Vibrating level switch The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt | BURKERT 宝帝流体控制系统 | |||
1.5 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed | GHZTECH | |||
SOT-23 Plastic-Encapsulate MOSFETS 文件:5.03147 Mbytes Page:5 Pages | DGNJDZ 南晶电子 | |||
-2.8A竊?20V P-CHANNEL MOSFET 文件:111.41 Kbytes Page:4 Pages | KIA 可易亚半导体 | |||
10V P-Channel Enhanced MOS FET 文件:171.02 Kbytes Page:3 Pages | FUMAN 富满微 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY |
23+ |
SOT23 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SILICONIX |
24+ |
SOT23 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
SI |
9906+ |
SOT23-3 |
1576 |
原装现货海量库存欢迎咨询 |
|||
SIL |
24+ |
SOP23 |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
VISHAY |
23+ |
SOT23 |
19567 |
||||
VISHAY |
20+ |
10950 |
全新现货热卖中欢迎查询 |
||||
VISAY |
2021+ |
60000 |
原装现货,欢迎询价 |
||||
VISHAY/威世 |
23+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
|||
SI |
24+ |
SOT23 |
6430 |
原装现货/欢迎来电咨询 |
|||
VIS |
24+ |
9000 |
SI2301DS-HF芯片相关品牌
SI2301DS-HF规格书下载地址
SI2301DS-HF参数引脚图相关
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- st70
- st18
- sst25vf040
- sr2m
- spwm
- spice模型
- spd
- sp3232
- soc
- smd
- sl11
- sk100
- sja1000
- sig
- SI2439
- SI2434
- SI2433
- SI2415
- SI2414
- SI2404
- SI2403
- SI2401
- SI2400
- SI2321
- SI2312
- SI2310
- SI2307
- SI2306
- SI2305B
- SI2305
- SI2304
- SI2303
- SI2302DDS_V02
- SI2302DDS_V01
- SI2302DDS
- SI2302CDS-T1-GE3
- SI2302CDS-T1-E3
- SI2302CDS_V01
- SI2302CDS
- SI2302B
- SI2302ADS-T1-GE3
- SI2302ADS-T1-E3
- SI2302ADS-T1
- SI2302ADS
- SI2302A
- SI2302_V01
- SI2302_13
- SI2302_11
- SI2302
- SI2301DS-T1-GE3
- SI2301DS-T1
- SI2301DS-HF-3
- SI2301DS-3
- SI2301DS
- SI2301CDS-T1-GE3
- SI2301CDS-T1-E3
- SI2301CDS_V01
- SI2301CDS_17
- SI2301CDS
- SI2301CD_V01
- SI2301CD
- SI2301BDS-T1-GE3
- SI2301BDS-T1-E3
- SI2301BDS-T1
- SI2301BDS-HF-3
- SI2301BDS-HF
- SI2301BDS-3
- SI2301BDS_V01
- SI2301BDS_08
- SI2301BDS
- SI2301BD
- SI2301B
- SI2301A
- SI2301
- SI2300
- SI2202
- SI2200
- SI2185
- SI2178
- SI2177
- SI2176
- SI2165
- SI2158
- SI2157
- SI2156
- SI2151
- SI2148
- SI2147
- SI2144
- SI2141
- SI2124
- SI2115
SI2301DS-HF数据表相关新闻
SI2301CDS-T1-GE3
SI2301CDS-T1-GE3 丝印N1 SOT-23 P沟道 贴片MOSFET
2022-1-4SI2301DS-T1-E3
SI2301DS-T1-E3
2020-9-11SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
2020-7-17SI2301DS-T1-E3
SI2301DS-T1-E3
2020-7-15SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
2020-7-14SI2301DS-T1-E3
SI2301DS-T1-E3
2020-6-23
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103