丝印代码：A1***；P-Channel 1.25-W, 2.5-V MOSFET

PRODUCT SUMMARY VDS (V)                 rDS(on) (Ω)                ID (A)   -20                0.130 @ VGS = -4.5 V      -2.3                        0.190 @ VGS = -2.5 V      -1.9

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-20V ● RDS(ON)

丝印代码：2301；P-Channel Enhancement-Mode MOS FETs

Application Battery protection Load switch Power management

20-V (D-S) Single

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-20V ● RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● RDS(ON)

P-Channel 1.25-W, 2.5-V MOSFET

PRODUCT SUMMARY VDS (V)                 rDS(on) (Ω)                ID (A)   -20                0.130 @ VGS = -4.5 V      -2.3                        0.190 @ VGS = -2.5 V      -1.9

场效应管(MOSFET)

P-Channel 20-V (D-S) MOSFET

文件：1.035119 Mbytes Page：9 Pages

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