P-Channel 1.25-W, 2.5-V MOSFET

PRODUCT SUMMARY VDS (V)                 rDS(on) (Ω)                ID (A)   -20                0.130 @ VGS = -4.5 V      -2.3                        0.190 @ VGS = -2.5 V      -1.9

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-20V ● RDS(ON)

P-Channel Enhancement-Mode MOS FETs

Application Battery protection Load switch Power management

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-20V ● RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● RDS(ON)

P-Channel 1.25-W, 2.5-V MOSFET

PRODUCT SUMMARY VDS (V)                 rDS(on) (Ω)                ID (A)   -20                0.130 @ VGS = -4.5 V      -2.3                        0.190 @ VGS = -2.5 V      -1.9

P-Channel 20-V (D-S) MOSFET

文件：1.035119 Mbytes Page：9 Pages

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

SOT-23 Plastic-Encapsulate MOSFETS

文件：5.03147 Mbytes Page：5 Pages

-2.8A竊?20V P-CHANNEL MOSFET

文件：111.41 Kbytes Page：4 Pages

10V P-Channel Enhanced MOS FET

文件：171.02 Kbytes Page：3 Pages