位置:首页 > IC中文资料第4174页 > SGW15N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SGW15N60 | 丝印代码:G15N60;Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 | ||
SGW15N60 | 丝印代码:G15N60;Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg | INFINEON 英飞凌 | ||
SGW15N60 | Short Circuit Rated IGBT 文件:557.14 Kbytes Page:7 Pages | FAIRCHILD 仙童半导体 | ||
SGW15N60 | Fast IGBT in NPT-technology | INFINEON 英飞凌 | ||
NPT Field-Stop IGBT DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC=15A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Solar Converters · UPS,PFC · Welding Converters | ISC 无锡固电 | |||
封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 31A 139W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | |||
Short Circuit Rated IGBT 文件:557.14 Kbytes Page:7 Pages | FAIRCHILD 仙童半导体 | |||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficien | MOTOROLA 摩托罗拉 | |||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at | ONSEMI 安森美半导体 | |||
Short Circuit Rated IGBT General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh | FAIRCHILD 仙童半导体 | |||
Short Circuit Rated IGBT General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh | FAIRCHILD 仙童半导体 | |||
Short Circuit Rated IGBT General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is requir | FAIRCHILD 仙童半导体 |
SGW15N60产品属性
- 类型
描述
- 型号
SGW15N60
- 功能描述
IGBT 晶体管 FAST IGBT NPT TECH 600V 15A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
15A,600V,不带D |
20000 |
全新原装假一赔十 |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
20000 |
只做原装 品质保障 |
|||
INFINEON/英飞凌 |
25+ |
PBFREE |
880000 |
明嘉莱只做原装正品现货 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
INFINEON |
24+ |
TO-247 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
Infineon Technologies |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
15+ |
TO247 |
13957 |
全新 发货1-2天 |
|||
Infineon |
19+ |
PG-TO247-3 |
30000 |
||||
INFINEON |
23+ |
PG-TO247-3 |
6800 |
只做原装正品现货 |
|||
INF |
24+ |
60 |
SGW15N60规格书下载地址
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DdatasheetPDF页码索引
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