型号 功能描述 生产厂家 企业 LOGO 操作
SGW15N60

丝印代码:G15N60;Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

INFINEON

英飞凌

SGW15N60

丝印代码:G15N60;Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg

INFINEON

英飞凌

SGW15N60

Short Circuit Rated IGBT

文件:557.14 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

SGW15N60

Fast IGBT in NPT-technology

INFINEON

英飞凌

NPT Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC=15A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Solar Converters · UPS,PFC · Welding Converters

ISC

无锡固电

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 31A 139W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

Short Circuit Rated IGBT

文件:557.14 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficien

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at

ONSEMI

安森美半导体

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh

FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh

FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is requir

FAIRCHILD

仙童半导体

SGW15N60产品属性

  • 类型

    描述

  • 型号

    SGW15N60

  • 功能描述

    IGBT 晶体管 FAST IGBT NPT TECH 600V 15A

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-3-14 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
23+
15A,600V,不带D
20000
全新原装假一赔十
INFINEON/英飞凌
22+
TO-247
20000
只做原装 品质保障
INFINEON/英飞凌
25+
PBFREE
880000
明嘉莱只做原装正品现货
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
INFINEON
24+
TO-247
8500
原厂原包原装公司现货,假一赔十,低价出售
Infineon Technologies
22+
TO2473
9000
原厂渠道,现货配单
INFINEON
15+
TO247
13957
全新 发货1-2天
Infineon
19+
PG-TO247-3
30000
INFINEON
23+
PG-TO247-3
6800
只做原装正品现货
INF
24+
60

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