Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg

Short Circuit Rated IGBT

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Fast IGBT in NPT-technology

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 31A 139W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Short Circuit Rated IGBT

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15 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

N-Channel 650V (D-S) Power MOSFET

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15A, 600V N-CHANNEL POWER MOSFET

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High Switching Speed

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CoolMOS Power Transistor

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