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SGW15N60RUF

Short Circuit Rated IGBT

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FAIRCHILD

仙童半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficien

MOTOROLA

摩托罗拉

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh

FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh

FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is requir

FAIRCHILD

仙童半导体

SGW15N60RUF产品属性

  • 类型

    描述

  • 型号

    SGW15N60RUF

  • 功能描述

    IGBT 晶体管 600V/15A

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-8-2 15:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
TQFP
258
英飞翎
TO-247
22+
6000
十年配单,只做原装
INFINEON/英飞凌
23+
P-TO247-3-1
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
N/A
23+
QFP
50000
全新原装正品现货,支持订货
INFINEON/英飞凌
22+
21670
INFINEON
23+
2A600V不带D
2569
全新原装假一赔十
FSC
23+
TO-263
8560
受权代理!全新原装现货特价热卖!
INFINEON
03+
142
全新 发货1-2天
SUPER超致
2022
TO-247
28
全新、原装
NEC
2025+
SSOP30
3785
全新原厂原装产品、公司现货销售

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