位置:首页 > IC中文资料第4174页 > SGW15N60RUF

型号 功能描述 生产厂家 企业 LOGO 操作
SGW15N60RUF

Short Circuit Rated IGBT

文件:557.14 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficien

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at

ONSEMI

安森美半导体

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh

FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh

FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is requir

FAIRCHILD

仙童半导体

SGW15N60RUF产品属性

  • 类型

    描述

  • 型号

    SGW15N60RUF

  • 功能描述

    IGBT 晶体管 600V/15A

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-3-18 10:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
INFINEON
25+
TO-247
90000
一级代理商进口原装现货、假一罚十价格合理
Infineon/英飞凌
2021+
PG-TO247-3
9600
原装现货,欢迎询价
INFINEON
23+
20A,600V,不带D
20000
全新原装假一赔十
24+
3000
自己现货
英飞凌
25+
TO247
10000
原装现货假一罚十
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON
24+
TO-247-3
35200
一级代理分销/放心采购
INFINEON
25+
TO-247
87
只做原装进口!正品支持实单!

SGW15N60RUF数据表相关新闻