位置:首页 > IC中文资料第4174页 > SGW15N60RUF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SGW15N60RUF | Short Circuit Rated IGBT 文件:557.14 Kbytes Page:7 Pages | FAIRCHILD 仙童半导体 | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficien | MOTOROLA 摩托罗拉 | |||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at | ONSEMI 安森美半导体 | |||
Short Circuit Rated IGBT General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh | FAIRCHILD 仙童半导体 | |||
Short Circuit Rated IGBT General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh | FAIRCHILD 仙童半导体 | |||
Short Circuit Rated IGBT General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is requir | FAIRCHILD 仙童半导体 |
SGW15N60RUF产品属性
- 类型
描述
- 型号
SGW15N60RUF
- 功能描述
IGBT 晶体管 600V/15A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON |
25+ |
TO-247 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
Infineon/英飞凌 |
2021+ |
PG-TO247-3 |
9600 |
原装现货,欢迎询价 |
|||
INFINEON |
23+ |
20A,600V,不带D |
20000 |
全新原装假一赔十 |
|||
24+ |
3000 |
自己现货 |
|||||
英飞凌 |
25+ |
TO247 |
10000 |
原装现货假一罚十 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装,可来电咨询 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON |
24+ |
TO-247-3 |
35200 |
一级代理分销/放心采购 |
|||
INFINEON |
25+ |
TO-247 |
87 |
只做原装进口!正品支持实单! |
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SGW15N60RUF规格书下载地址
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DdatasheetPDF页码索引
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