位置:首页 > IC中文资料第4174页 > SGW15N60RUF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SGW15N60RUF | Short Circuit Rated IGBT 文件:557.14 Kbytes Page:7 Pages | FAIRCHILD 仙童半导体 | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at | ONSEMI 安森美半导体 | |||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficien | MOTOROLA 摩托罗拉 | |||
Short Circuit Rated IGBT General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh | FAIRCHILD 仙童半导体 | |||
Short Circuit Rated IGBT General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh | FAIRCHILD 仙童半导体 | |||
Short Circuit Rated IGBT General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is requir | FAIRCHILD 仙童半导体 |
SGW15N60RUF产品属性
- 类型
描述
- 型号
SGW15N60RUF
- 功能描述
IGBT 晶体管 600V/15A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TQFP |
258 |
|||||
英飞翎 |
TO-247 |
22+ |
6000 |
十年配单,只做原装 |
|||
INFINEON/英飞凌 |
23+ |
P-TO247-3-1 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
N/A |
23+ |
QFP |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON/英飞凌 |
22+ |
21670 |
|||||
INFINEON |
23+ |
2A600V不带D |
2569 |
全新原装假一赔十 |
|||
FSC |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
INFINEON |
03+ |
142 |
全新 发货1-2天 |
||||
SUPER超致 |
2022 |
TO-247 |
28 |
全新、原装 |
|||
NEC |
2025+ |
SSOP30 |
3785 |
全新原厂原装产品、公司现货销售 |
SGW15N60RUF芯片相关品牌
SGW15N60RUF规格书下载地址
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DdatasheetPDF页码索引
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