NPT Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC=15A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Solar Converters · UPS,PFC · Welding Converters

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 31A 139W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficien

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wh

Short Circuit Rated IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is requir