IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance)

FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at IC=60A) * High Input Impedance APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven

General Description

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for induction h

IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance)

封装/外壳：TO-264-3，TO-264AA 包装：管件 描述：IGBT 900V 60A 180W TO264 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-264-3，TO-264AA 包装：管件 描述：IGBT 900V 60A 180W TO264 分立半导体产品 晶体管 - UGBT、MOSFET - 单