General Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching

performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for induction heating applications.

Features

• High speed switching

• Low saturation voltage : VCE(sat)= 2.0 V @ IC = 60A

• High input impedance

• Built-in fast recovery diode

Applications

Home appliances, induction heaters, induction heating JARs, and microwave ovens.